Samsung 870 Evo 2TB SATA SSD
Fast internal SATA SSD Drive
| Brand: Samsung |
| Storage Type: Internal SSD |
| Storage Size: 2TB |
Internal Reference:
MZ-77E2T0BW
The SAMSUNG 870 EVO 2TB SATA SSD is a high-performance solid-state drive designed for reliable storage and fast data transfer speeds. Here is a description and technical specifications in metric units:
Description:
The SAMSUNG 870 EVO 2TB SATA SSD offers a spacious 2TB storage capacity in a compact form factor. It is ideal for upgrading your computer's storage capacity or improving overall system performance. With its SATA interface, this SSD provides fast and efficient data transfer speeds for seamless multitasking and quick access to your files.
Technical Specifications:
- Capacity: 2TB (Terabytes)
- Interface: SATA 6Gb/s (SATA III)
- Form Factor: 2.5 inches
- Sequential Read Speed: Up to 560 MB/s (Megabytes per second)
- Sequential Write Speed: Up to 530 MB/s (Megabytes per second)
- Random Read Speed (4KB, QD32): Up to 98,000 IOPS (Input/Output Operations Per Second)
- Random Write Speed (4KB, QD32): Up to 88,000 IOPS (Input/Output Operations Per Second)
- Endurance (TBW): 1,200 TBW (Terabytes Written)
- MTBF (Mean Time Between Failures): 1.5 million hours
These specifications highlight the performance and reliability of the SAMSUNG 870 EVO 2TB SATA SSD, making it a great choice for storage upgrades and high-speed data processing tasks.
| Security algorithms | 256-bit AES |
|---|---|
| Operating temperature (T-T) | 0 - 70 |
| S.M.A.R.T. support | Y |
| Width | 100 |
| Interface | Serial ATA III |
| SSD capacity | 2000 |
| Component for | PC |
| Data transfer rate | 6 |
| Write speed | 530 |
| Random read (4KB) | 98000 |
| Read speed | 560 |
| SSD form factor | 2.5" |
| Mean time between failures (MTBF) | 1500000 |
| Height | 69.85 |
| Operating voltage | 5 |
| TRIM support | Y |
| Operating shock | 1500 |
| Weight | 45 |
| Depth | 6.8 |
| Power consumption (idle) | 0.03 |
| Power consumption (max) | 3.5 |
| TBW rating | 2400 |
| Power consumption (average) | 2.2 |
| Random write (4KB) | 88000 |
| Memory type | V-NAND MLC |